Kevin Jones

Professor University of Florida

Gainesville FL

Kevin Jones studies front-end processing of semiconductors.

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Biography

Kevin Jones is a distinguished professor who studies semiconductor processing and characterization. Kevin works with companies to understand how to continue to shrink devices. He also utilizes electron microscopy to research defects that arise during semiconductor processing. He is the chair of the International Committee on Ion Implantation Technology, which played a critical part in the making of modern transistors.

Areas of Expertise

IC manufacturing

Processing and characterization of semiconductors

Semiconductors

Transmission electron microscopy

Media Appearances

Increasing Social Literacy in Future Innovators

TED online

2020-10-01

In his talk, Kevin Jones, Ph.D. discusses how creating socially literate engineers can improve the successful impact of their innovations. Using his world-renowned Impact of Materials on Society course as a talking point, Jones encourages educators to equip engineering and non-engineering students with the tools needed to work in teams to create socially responsible engineering solutions.

Social

Articles

Strain and Defect Evolution of Si1-xGex/Si Heterostructures Grown by Pulsed Laser Induced Epitaxy

ScienceDirect

Johnson, et al.

2022-08-01

The relaxation mechanism of Si1-xGex/Si heterostructures subjected to pulsed laser melting was investigated by probing the pulsed laser induced epitaxy (PLIE) regime of undoped 20 nm Si0.5Ge0.5/Si thin films.

Selective amorphization of SiGe in Si/SiGe nanostructures via high energy Si+ implant

Journal of Applied Physics

Turner, et al.

2022-07-15

The selective amorphization of SiGe in Si/SiGe nanostructures via a 1 MeV Si+ implant was investigated, resulting in single-crystal Si nanowires (NWs) and quantum dots (QDs) encapsulated in amorphous SiGe fins and pillars, respectively.

The Diffusion Mechanism of Ge During Oxidation of Si/SiGe Nanofins

ACS Publications

Thornton, et al.

2022-06-15

A recently discovered, enhanced Ge diffusion mechanism along the oxidizing interface of Si/SiGe nanostructures has enabled the formation of single-crystal Si nanowires and quantum dots embedded in a defect-free, single-crystal SiGe matrix. Here, we report oxidation studies of Si/SiGe nanofins aimed at gaining a better understanding of this novel diffusion mechanism.