Megan Stokey, Ph.D.
Assistant Professor | Milwaukee School of Engineering
Milwaukee, WI, UNITED STATES
Dr. Megan Stokey is an assistant professor in the Electrical Engineering and Computer Science Department at MSOE.
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Education, Licensure and Certification (2)
Ph.D.: Electrical Engineering, University of Nebraska-Lincoln 2023
B.S.: Electrical Engineering, University of Nebraska-Lincoln 2019
Biography
Dr. Megan Stokey is an assistant professor in the Electrical, Computer and Biomedical Engineering department and has been a faculty member at MSOE since 2023. She applies research-based teaching philosophy to her undergraduate courses where she covers circuit analysis and laboratories.
Areas of Expertise (5)
Photonics
Characterization
Electrical Engineering
Semiconductor Engineering
Modeling and Simulation
Accomplishments (5)
J.A. Woollam Best Student Paper Award (professional)
2022
Milton Mohr Fellowship (professional)
2020-2022
Graham Engineering Fellowship (professional)
2022
Halla Fellowship (professional)
2019
Holling Fellowship (professional)
2019
Affiliations (2)
- Applied Physics Letters : Peer Reviewer
- Graduate Student Assembly Department Representative
Selected Publications (5)
Anisotropic dielectric function, direction dependent bandgap energy, band order, and indirect to direct gap crossover in α-(AlxGa1−x)2O3 (≤x≤1 )
Applied Physics Letters2022 Mueller matrix spectroscopic ellipsometry is applied to determine anisotropic optical properties for a set of single-crystal rhombohedral structure α-(AlxGa1−x)2O3 thin films (0 ≤ x ≤ 1). Samples are grown by plasma-assisted molecular beam epitaxy on m-plane sapphire. A critical-point model is used to render a spectroscopic model dielectric function tensor and to determine direct electronic band-to-band transition parameters, including the direction dependent two lowest-photon energy band-to-band transitions associated with the anisotropic bandgap.
Elevated temperature spectroscopic ellipsometry analysis of the dielectric function, exciton, band-to-band transition, and high-frequency dielectric constant properties for single-crystal ZnGa2O4
Applied Physics Letters2022 We report the elevated temperature (22 °C ≤ T ≤ 600 °C) dielectric function properties of melt grown single crystal ZnGa2O4 using a spectroscopic ellipsometry approach. A temperature dependent Cauchy dispersion analysis was applied across the transparent spectrum to determine the high-frequency index of refraction yielding a temperature dependent slope of 3.885(2) × 10−5 K−1.
Infrared active phonons in monoclinic lutetium oxyorthosilicate
Journal of Applied Physics2020 A combined generalized spectroscopic ellipsometry measurement and density functional theory calculation analysis is performed to obtain the complete set of infrared active phonon modes in Lu2SiO5 with a monoclinic crystal structure. Two different crystals, each cut perpendicular to a different crystal axis, are investigated.
Lattice dynamics of orthorhombic NdGaO3
Physical Review B2019 A complete set of infrared-active and Raman-active lattice modes is obtained from density functional theory calculations for single-crystalline centrosymmetric orthorhombic neodymium gallate. The results for infrared-active modes are compared with an analysis of the anisotropic long-wavelength properties using generalized spectroscopic ellipsometry. The frequency-dependent dielectric function tensor and dielectric loss function tensor of orthorhombic neodymium gallium oxide are reported in the spectral range of 80–1200 cm −1.
Terahertz electron paramagnetic resonance generalized spectroscopic ellipsometry: The magnetic response of the nitrogen defect in 4H-SiC
Applied Physics Letters2022 We report on terahertz (THz) electron paramagnetic resonance generalized spectroscopic ellipsometry (THz-EPR-GSE). Measurements of field and frequency dependencies of magnetic response due to spin transitions associated with nitrogen defects in 4H-SiC are shown as an example. THz-EPR-GSE dispenses with the need of a cavity, permits independently scanning field and frequency parameters, and does not require field or frequency modulation.
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