Volker Sorger

Professor | Assistant Director University of Florida

Gainesville FL

Volker Sorger studies photonics, optoelectronics, semiconductors, business development and public-private partnerships.

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Biography

Volker J. Sorger is the Rhines Endowed Professor for Semiconductor Photonics in the Department of Electrical and Computer Engineering and the director for business development in the Florida Semiconductor Institute. Volker coordinates semiconductor activities for the state of Florida, nationwide and transatlantic partnerships. Technical thrusts include AI/ML photonic accelerators, advanced packaging, optoelectronics, digital twins and aerospace flight test. He holds 28 U.S. patents and disclosures.

Areas of Expertise

Investment

Jobs

Optical Engine

Machine Learning

Photonics

Semiconductors

Chips

Supply Chain

Artifical Intelligence

Advanced packaging

Interposer

Reshoring jobs

Media Appearances

University of Florida to lead hub for $285 million semiconductor research institute

UF News online

2024-11-19

The University of Florida will lead one of seven regional hubs of a new, $285 million nationwide institute dedicated to advancing America’s semiconductor industry through next-generation simulations known as digital twins.

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Articles

Electrical programmable multilevel nonvolatile photonic random-access memory

Light: Science & Applications

Meng, et al.

2023-08-01

We demonstrate a multistate electrically programmed low-loss nonvolatile photonic memory based on a broadband transparent phase-change material (Ge2Sb2Se5, GSSe) with ultralow absorption in the amorphous state.

Photonic tensor cores for machine learning

Applied Physics Review

Miscuglio & Sorger

2020-07-21

In this manuscript, we introduce an integrated photonics-based tensor core unit by strategically utilizing (i) photonic parallelism via wavelength division multiplexing, (ii) high 2 peta-operations-per-second throughputs enabled by tens of picosecond-short delays from optoelectronics and compact photonic integrated circuitry, and (iii) near-zero static power-consuming novel photonic multi-state memories based on phase-change materials featuring vanishing losses in the amorphous state.

Strain-engineered high-responsivity MoTe2 photodetector for silicon photonic integrated circuits

Nature Photonics

Maiti, et al.

2020-06-22

No efficient photodetector in the telecommunication C-band has been realized with two-dimensional transition metal dichalcogenide materials due to their large optical bandgaps. Here we demonstrate a MoTe2-based photodetector featuring a strong photoresponse (responsivity 0.5 A W–1) operating at 1,550 nm in silicon photonics enabled by strain engineering the two-dimensional material.