Javier Sanchez-Yamagishi

Assistant Professor of Physics and Astronomy UC Irvine

  • Irvine CA

Javier Sanchez-Yamagishi is an experimental physicist who discovers new approaches to quantum physics for the development of new devices.

Contact

UC Irvine

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Biography

The Sanchez-Yamagishi lab seeks to discover new funky quantum behaviors for electrons that have no counterpart in the world of classical physics. Their strategy is to design strange landscapes for the electrons to live in and then observe how they behave and interact with their neighbors. To accomplish this, they use advanced nanofabrication techniques as well as electronic, optical, and magnetic characterization methods. Their favorite electron playground is 2-dimensional layered materials, where electrons are naturally confined into a 2-dimensional plane and quantum effects are more apparent. They also explore the use of quantum sensors based on spin qubits in diamond as a probe of electronic physics. Their end goal is to invent new useful quantum devices that manipulate charge, light, heat, spin, and information.

Areas of Expertise

Quantum Devices
Condensed Matter Physics
Electronic Transport
2-dimensional Materials
Nanoscale Magnetometry
Quantum Phenomena
Quantum Computing

Accomplishments

National Science Foundation Graduate Research Fellowship

2008-2011

Harvard Quantum Optics Center Postdoctoral Fellowship

2015-2017

National Academy of Sciences Kavli Frontiers Fellow

2019

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Education

Rutgers University

B.S.

Physics

2008

Massachusetts Institute of Technology

Ph.D.

Physics

2015

Media Appearances

Metal sheets, ultra-thin feats: are China’s 2D metals the future of electronics?

South China Morning Post  online

2025-03-16

Javier Sanchez-Yamagishi, a specialist in two-dimensional (2D) materials at the University of California, Irvine, said that while the Chinese team was not the first to produce atomically thin metals, their results stood out because the new method produces “large-scale, truly 2D metals” compared to previous techniques.

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Articles

Controllable strain-driven topological phase transition and dominant surface-state transport in HfTe5

Nature Communications

Jinyu Liu, Yinong Zhou, Sebastian Yepez Rodriguez, Matthew A. Delmont, Robert A. Welser, Triet Ho, Nicholas Sirica, Kaleb McClure, Paolo Vilmercati, Joseph W. Ziller, Norman Mannella, Javier D. Sanchez-Yamagishi, Michael T. Pettes, Ruqian Wu & Luis A. Jauregui

2024

The fine-tuning of topologically protected states in quantum materials holds great promise for novel electronic devices. However, there are limited methods that allow for the controlled and efficient modulation of the crystal lattice while simultaneously monitoring the changes in the electronic structure within a single sample. Here, we apply significant and controllable strain to high-quality HfTe5 samples and perform electrical transport measurements to reveal the topological phase transition from a weak topological insulator phase to a strong topological insulator phase.

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Electrically driven amplification of terahertz acoustic waves in graphene

Nature Communications

Aaron H. Barajas-Aguilar, Jasen Zion, Ian Sequeira, Andrew Z. Barabas, Takashi Taniguchi, Kenji Watanabe, Eric B. Barrett, Thomas Scaffidi & Javier D. Sanchez-Yamagishi

2024

In graphene devices, the electronic drift velocity can easily exceed the speed of sound in the material at moderate current biases. Under these conditions, the electronic system can efficiently amplify acoustic phonons, leading to an exponential growth of sound waves in the direction of the carrier flow. Here, we show that such phonon amplification can significantly modify the electrical properties of graphene devices. We observe a superlinear growth of the resistivity in the direction of the carrier flow when the drift velocity exceeds the speed of sound — resulting in a sevenfold increase over a distance of 8 µm.

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Exceptional electronic transport and quantum oscillations in thin bismuth crystals grown inside van der Waals materials

Nature Materials

Laisi Chen, Amy X. Wu, Naol Tulu, Joshua Wang, Adrian Juanson, Kenji Watanabe, Takashi Taniguchi, Michael T. Pettes, Marshall A. Campbell, Mingjie Xu, Chaitanya A. Gadre, Yinong Zhou, Hangman Chen, Penghui Cao, Luis A. Jauregui, Ruqian Wu, Xiaoqing Pan & Javier D. Sanchez-Yamagishi

2024

Confining materials to two-dimensional forms changes the behaviour of the electrons and enables the creation of new devices. However, most materials are challenging to produce as uniform, thin crystals. Here we present a synthesis approach where thin crystals are grown in a nanoscale mould defined by atomically flat van der Waals (vdW) materials. By heating and compressing bismuth in a vdW mould made of hexagonal boron nitride, we grow ultraflat bismuth crystals less than 10 nm thick. Due to quantum confinement, the bismuth bulk states are gapped, isolating intrinsic Rashba surface states for transport studies.

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